absolute maximum ratings t a =25c unless otherwise noted aot460 n-channel enhancement mode field effect transistor features v ds (v) = 60v i d = 85 a (v gs = 10v) r ds(on) < 7.5m w (v gs = 10v) 100% uis tested! general description the aot460/l uses advanced trench technology and design to provide excellent r ds(on) with low gate charge. this device is suitable for use in ups, high current switching applications. aot460and aot460l are electrically identical. -rohs compliant -halogen free g d s to220 top view bottom view g g s d d s d symbol v ds v gs i dm i ar e ar t j , t stg symbol typ max r q ja 45 60 r q jc 0.45 0.56 a mj -55 to 175 t c =100c avalanche current c 80 repetitive avalanche energy l=0.1mh c 320 i d 85 66 340 junction and storage temperature range a p d c 268 134 pulsed drain current c power dissipation b t c =25c continuous drain current g maximum units parameter t c =25c t c =100c absolute maximum ratings t a =25c unless otherwise noted vv 20 gate-source voltage drain-source voltage 60 w maximum junction-to-case b steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a steady-state c/w alpha & omega semiconductor, ltd. www.aosmd.com
aot460 symbol min typ max units bv dss 60 v 10 t j =55c 50 i gss 100 na v gs(th) 2 2.95 4 v i d(on) 340 a 6.3 7.5 t j =125c 10.5 13 g fs forward transconductance 90 s v sd 0.7 1 v i s 85 a c iss 3800 4560 pf c oss 430 pf c rss 190 pf r g 1.5 2.3 w q g (10v) 68 88 nc q g (4.5v) 33 nc q gs 15 nc q gd 19 nc t d(on) 18 ns t r 35 ns maximum body-diode continuous current g input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time v gs =10v, v ds =30v, r l =1 w , total gate charge v gs =10v, v ds =30v, i d =30a gate source charge gate drain charge total gate charge m w i s =1a, v gs =0v v ds =5v, i d =30a gate resistance v gs =0v, v ds =0v, f=1mhz zero gate voltage drain current gate-body leakage current diode forward voltage static drain-source on-resistance r ds(on) i dss electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions m a gate threshold voltage v ds =v gs , i d =250 m a v ds =60v, v gs =0v v ds =0v, v gs =20v drain-source breakdown voltage on state drain current i d =250ua, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =30a reverse transfer capacitance v gs =0v, v ds =30v, f=1mhz switching parameters alpha & omega semiconductor, ltd. www.aosmd.com t r 35 ns t d(off) 44 ns t f 23 ns t rr 53 64 ns q rr 98 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =30a, di/dt=100a/ m s turn-on rise time turn-off delaytime v gs =10v, v ds =30v, r l =1 w , r gen =3 w turn-off fall time body diode reverse recovery time i f =30a, di/dt=100a/ m s a: the value of r q ja is measured with the device in a still air environm ent with t a =25 c. b. the power dissipation p d is based on t j(max) =175 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c: repetitive rating, pulse width limited by juncti on temperature t j(max) =175 c. d. the r q ja is the sum of the thermal impedence from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175 c. g. the maximum current rating is limited by bond-wi res. rev1: jan. 2009 alpha & omega semiconductor, ltd. www.aosmd.com
aot460 typical electrical and thermal characteristics 0 20 40 60 80 100 2 2.5 3 3.5 4 4.5 5 5.5 i d (a) v gs (volts) figure 2: transfer characteristics 6 6.2 6.4 6.6 6.8 7 7.2 0 20 40 60 80 100 r ds(on) (m w ww w ) 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 - 50 - 25 0 25 50 75 100 125 150 175 normalized on-resistance v gs =10v, 30a 25 c 125 c v ds =5v v gs =10v 0 50 100 150 200 250 0 1 2 3 4 5 i d (a) v ds (volts) figure 1: on-region characteristics v gs =4v 5v 10v 8v - 4.5v alpha & omega semiconductor, ltd. www.aosmd.com 6 0 20 40 60 80 100 i d (a) figure 3: on-resistance vs. drain current and gate voltage 0.0001 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics 25 125 c -40 c 0.6 -50 -25 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature 0 5 10 15 20 25 4 8 12 16 20 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage - 40 c i d =30a 25 c 125 alpha & omega semiconductor, ltd. www.aosmd.com
aot460 typical electrical and thermal characteristics 0 2 4 6 8 10 0 20 40 60 80 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 2 4 6 0 15 30 45 60 capacitance (nf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =30v i d =30a 1 10 100 1000 1 10 100 i d (a) t j(max) =175 c t c =25 c r ds(on) limited 500 m s 5ms 1ms 10 m s dc 100 1000 10000 0.0001 0.001 0.01 0.1 1 10 power (w) alpha & omega semiconductor, ltd. www.aosmd.com 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q qq q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impe dance (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =0.45 c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 1 10 100 v ds (v) figure 9: maximun forward biased safe operating area (note f) t j(max) =175 c t c =25 c 100 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) alpha & omega semiconductor, ltd. www.aosmd.com
aot460 typical electrical and thermal characteristics 0 50 100 150 200 250 300 0 25 50 75 100 125 150 175 power dissipation (w) t case (c) figure 13: power de-rating (note b) 0 20 40 60 80 100 0 25 50 75 100 125 150 175 current rating i d (a) t case (c) figure 12: current de-rating (note b) 0 25 50 75 100 125 150 i d (a), peak avalanche current t a =150 c t a =25 c alpha & omega semiconductor, ltd. www.aosmd.com 0 25 0.000001 0.00001 0.0001 0.001 i d (a), peak avalanche current time in avalanche, t a (s) figure 10: single pulse avalanche capability alpha & omega semiconductor, ltd. www.aosmd.com
aot460 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off l vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar alpha & omega semiconductor, ltd. www.aosmd.com vdd vgs id vgs rg dut - + vdc vgs vds id vgs bv i ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr alpha & omega semiconductor, ltd. www.aosmd.com
|
